Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3262971
Reference22 articles.
1. Reliability and performance limitations in SiC power devices
2. High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
3. Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen
4. Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy
5. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
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1. Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-08
2. Interaction between water molecules and 3C-SiC nanocrystal surface;Science China Physics, Mechanics & Astronomy;2014-03-17
3. SiO2/SiC structures annealed in D218O: Compositional and electrical effects;Applied Physics Letters;2014-03-17
4. Effect of Ar annealing temperature on SiO2/SiC:SiO2densification change causing leakage current reduction;The European Physical Journal Applied Physics;2013-04-30
5. Unraveling the role of SiC or Si substrates in water vapor incorporation in SiO2 films thermally grown using ion beam analyses;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02
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