Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4823480
Reference28 articles.
1. Sol–gel derived hydrogen annealed ZnO:Al films for silicon solar cell application
2. p-Si nanowires/SiO2/n-ZnO heterojunction photodiodes
3. Zero-biased near-ultraviolet and visible photodetector based on ZnO nanorods/n-Si heterojunction
4. First-principles density functional study of dopant elements at grain boundaries in ZnO
5. Effect of thickness on structural, electrical, and optical properties of ZnO: Al films deposited by pulsed laser deposition
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