Anomalous thermal transport and high thermoelectric performance of Cu-based vanadate CuVO3

Author:

Jin Xin12ORCID,Ou Qiling1ORCID,Wei Haoran3ORCID,Ding Xianyong3ORCID,Zhan Fangyang3,Wang Rui34ORCID,Yang Xiaolong34ORCID,Lv Xuewei2,Yu Peng1ORCID

Affiliation:

1. College of Physics and Electronic Engineering, Chongqing Normal University 1 , Chongqing 401331, People's Republic of China

2. College of Materials Science and Engineering, Chongqing University 2 , Chongqing 400044, People's Republic of China

3. College of Physics and Chongqing Key Laboratory for Strongly Coupled Physics, Chongqing University 3 , Chongqing 400044, People's Republic of China

4. Center of Quantum Materials and Devices, Chongqing University 4 , Chongqing 400044, People's Republic of China

Abstract

Thermoelectric (TE) conversion technology, capable of transforming heat into electricity, is critical for sustainable energy solutions. Many promising TE materials contain rare or toxic elements, so the development of cost-effective and eco-friendly high-performance TE materials is highly urgent. Herein, we explore the thermal transport and TE properties of transition metal vanadate CuVO3 by using first-principles calculation. On the basis of the unified theory of heat conduction, we uncover the hierarchical thermal transport feature in CuVO3, where wave-like tunneling makes a significant contribution to the lattice thermal conductivity (κl) and results in the anomalously weak temperature dependence of κl. This is primarily attributable to the complex phononic band structure caused by the heterogeneity of Cu–O and V–O bonds. Simultaneously, we report a high power factor of 5.45 mW·K−2·m−1 realized in hole-doped CuVO3, which arises from a high electrical conductivity and a large Seebeck coefficient enabled by the multiple valleys and large electronic density of states near the valence band edge. Impressively, the low κl and the high power factor make p-typed CuVO3 have ZT of up to 1.39, with the excellent average ZT above 1.0 from 300 to 600 K, which is superior to most reported Cu-based TE materials. Our findings suggest that the CuVO3 compound is a promising candidate for energy conversion applications in innovative TE devices.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Foundation Research Fund for National Natural Science Foundation of China

the Science and Technology Research Program of Chongqing Municipal Educantion Commission

the Foundation of Chongqing Normal University

Publisher

AIP Publishing

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