Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118887
Reference11 articles.
1. Applications of HBTs
2. Development of HBT structure to minimize parasitic elements
3. Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors
4. Gas-Source Molecular Beam Epitaxy of Electronic Devices
5. AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch
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