Design of the tunnel contacts and the transport region of all-electrical spin-injection-detection devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2177203
Reference8 articles.
1. Spintronics: Fundamentals and applications
2. Optical investigation of electrical spin injection into semiconductors
3. Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
4. Generalized semiclassical model for the density of states in heavily doped semiconductors
5. Resonant Spin Amplification inn-Type GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reducing Schottky barrier height for Fe/n-GaAs junction by inserting thin GaOx layer;Journal of Applied Physics;2011-04
2. Low effective barrier height of GaOx tunnel barrier in metal/semiconductor hybrid junctions;Applied Physics Letters;2009-04-13
3. Enhanced electrical spin injection and detection in biased lateral ferromagnet–semiconductor structures;Journal of Physics: Condensed Matter;2007-06-20
4. Towards all-electrical spin injection and detection in GaAs;physica status solidi (c);2006-12
5. Design of an all-electrical spin-injection-detection device in GaAs;physica status solidi (c);2006-12
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