Mechanism of different orientation of CdTe on GaAs by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361204
Reference11 articles.
1. Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces
2. RHEED, XPS, HRTEM and channeling studies of molecular beam epitaxy growth of CdTe On (001) GaAs
3. CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization
4. Observation of the CdTe-GaAs Interface by High Resolution Electron Microscopy
5. High resolution electron microscope study of epitaxial CdTe‐GaAs interfaces
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1. Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density;Journal of Materials Science: Materials in Electronics;2024-05
2. Characterization of the microstructures and optical properties of CdTe(0 0 1) and (1 1 1) thin films grown on GaAs(0 0 1) substrates by molecular beam epitaxy;Journal of Crystal Growth;2020-09
3. Metalorganic vapor phase epitaxy of large size CdTe grains on mica through chemical and van der Waals interactions;Physical Review Materials;2018-11-13
4. Effects of a ZnTe buffer layer on structural quality and morphology of CdTe epilayer grown on (001)GaAs by molecular beam epitaxy;Vacuum;2012-02
5. EFFECT OF SUBSTRATE TEMPERATURE ON THE STRUCTURAL AND THE OPTICAL PROPERTIES OF CdTe (100) EPITAXIAL FILMS GROWN ON GaAs (100) SUBSTRATES;Surface Review and Letters;2007-08
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