Investigation of Pd∕Ti∕Al and Ti∕Al Ohmic contact materials on Ga-face and N-face surfaces of n-type GaN-Reference-Cited by-同舟云学术

Investigation of Pd∕Ti∕Al and Ti∕Al Ohmic contact materials on Ga-face and N-face surfaces of n-type GaN

Published:2006-05-08 Issue:19 Volume:88 Page:193505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jang T.,Lee S. N.,Nam O. H.,Park Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2201881

Reference13 articles.

1. M. O. Holcomb, R. Mueller-Mach, G. O. Mueller, D. Collins, R. M. Fletcher, D. A. Steigerwald, S. Eberle, Y. K. Lim, P. S. Martin, and M. Krames, Conference on Lasers and Electro-Optics and Quantum Electronics and Laser Science Conference (CLEO/QELS), Baltimore, MD, 1–6 June 2003 (Optical Society of America, Washington, DC, 2003), p. 4.

2. Recent progress of nitride-based light emitting devices

3. High efficiency GaN-based LEDs and lasers on SiC

4. Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

5. Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

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