Quantum dot structures grown on Al containing quaternary material for infrared photodetection beyond 10μm-Reference-Cited by-同舟云学术

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Quantum dot structures grown on Al containing quaternary material for infrared photodetection beyond 10μm

Published:2007-04-23 Issue:17 Volume:90 Page:173510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Souza P. L.,Lopes A. J.,Gebhard T.,Unterrainer K.,Pires M. P.,Villas-Boas J. M.,Vieira G. S.,Guimarães P. S. S.,Studart Nelson

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2733603

Reference15 articles.

1. Device physics and state-of-the-art of quantum well infrared photodetectors and arrays

2. Competitive technologies of third generation infrared photon detectors

3. Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors

4. Quantum dot infrared photodetectors: Comparison of experiment and theory

5. High-performance mid-infrared quantum dot infrared photodetectors

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1. Quantifying milk proteins using infrared photodetection for portable equipment;Journal of Food Engineering;2021-11

2. Carrier Localization in GaN/AlN Quantum Dots As Revealed by Three-Dimensional Multimicroscopy;Nano Letters;2017-06-27

3. Negative photoconductance in a biased multiquantum well with filter barriers;Physical Review B;2014-01-03

4. Exceptionally Narrow-Band Quantum Dot Infrared Photodetector;IEEE Journal of Quantum Electronics;2012-10

5. State filling dependent luminescence in hybrid tunnel coupled dot–well structures;Nanoscale;2012

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