Current drift mechanism in In0.53Ga0.47As depletion mode metal‐insulator field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96629
Reference5 articles.
1. Characteristics of the low-temperature-deposited SiO2-Ga0.47In0.53As metal/insulator/semiconductor interface
2. Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance
3. Time‐dependent response of interface states in indium phosphide metal–insulator–semiconductor capacitors investigated with constant‐capacitance deep‐level transient spectroscopy
4. Investigation of effective-medium models of microscopic surface roughness by spectroscopic ellipsometry
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison between n-type and p-type Al/SiNx:H/In0.53Ga0.47As devices deposited by electron cyclotron resonance technique;Semiconductor Science and Technology;2000-06-30
2. Propriétés électriques d'hétérostructures a-GaAs/c-GaAs(n) et de structures de type MIS a-GaAsN/c-GaAs(n);Journal de Physique III;1995-10
3. Application of Silicon Interface Control Layer Technique to Fabrication of InGaAs Metal-Insulator-Semiconductor FETs;Control of Semiconductor Interfaces;1994
4. A review of III–V semiconductor based metal-insulator-semiconductor structures and devices;Thin Solid Films;1993-08
5. Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors with improved stability;Applied Physics Letters;1993-06-21
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