High‐barrier height metal‐insulator‐semiconductor diodes onn‐InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343331
Reference12 articles.
1. Ag/Ai schottky contacts on n-InP
2. Reduction of the concentration of slow insulator states in SiO2/InP metal–insulator semiconductor structures
3. High‐pressure thermal oxidation of InP in steam
4. A study of the chemical oxide/InP interface by deep‐level transient spectroscopy
5. Anodic oxidation of InP using a citric‐acid‐based solution
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1. Surface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-09
2. X-ray photoelectron spectroscopy analysis of the effect of temperature upon surface composition of InP etched in Cl2-based inductively coupled plasma;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-01
3. Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics;Applied Physics Letters;2013-12-23
4. Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide;Chemistry of Materials;2013-03-20
5. Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP;Journal of Semiconductors;2011-10
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