Tangential magnetoresistance of two‐dimensional electron gas at a selectively dopedn‐GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Tangential magnetoresistance of two‐dimensional electron gas at a selectively dopedn‐GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy

Published:1982-05-15 Issue:10 Volume:40 Page:893-895
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ohno H.,Sakaki H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.92938

Reference7 articles.

1. Two-dimensional electron gas at a semiconductor-semiconductor interface

2. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

3. Two-dimensional electron gas m.e.s.f.e.t. structure

4. Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs

5. High Electron Mobility Transistor Logic

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