Three-dimensional integrated resonant tunneling transistor with multiple peaks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1505748
Reference10 articles.
1. Epitaxially overgrown, stable W–GaAs Schottky contacts with sizes down to 50 nm
2. Resonant-tunneling mixed-signal circuit technology
3. Gated resonant tunnelling devices
4. Radiative recombination in near‐surface strained Si1−xGex/Si quantum wells
5. Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
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1. Dynamically modulated tunneling for multipurpose electron devices: Application to THz frequency multiplication;Solid-State Electronics;2007-10
2. Room-temperature InAlAs∕InGaAs∕InP planar resonant tunneling-coupled transistor;Applied Physics Letters;2005-10-31
3. Boundary conditions for electron tunneling in complex two- and three-dimensional structures;Physical Review B;2005-10-07
4. General expressions for quantum transport in arbitrary potential profile: L-electron effect on AlAs–GaAs–AlAs double-barrier structure;Journal of Applied Physics;2005-06
5. Tunneling spectroscopy of a quantum dot through a single impurity;Physical Review B;2003-07-30
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