Combining high resolution and tensorial analysis in Raman stress measurements of silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1592872
Reference17 articles.
1. Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment
2. Measuring the tensor nature of stress in silicon using polarized off‐axis Raman spectroscopy
3. Polarized off-axis Raman spectroscopy: A technique for measuring stress tensors in semiconductors
4. Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon
5. The Raman effect in crystals
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