Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4798323
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1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. The Blue Laser Diode
3. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
4. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
5. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
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