Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4871713
Reference19 articles.
1. Phosphorus-doped chemical vapor deposition of diamond
2. n-type doping of (001)-oriented single-crystalline diamond by phosphorus
3. n-type conductivity in ultrananocrystalline diamond films
4. Tight-binding molecular-dynamics simulation of impurities in ultrananocrystalline diamond grain boundaries
5. Ultra-nano-crystalline/single crystal diamond heterostructure diode
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