In-situ synchrotron x-ray studies of the microstructure and stability of In2O3 epitaxial films-Reference-Cited by-同舟云学术

In-situ synchrotron x-ray studies of the microstructure and stability of In2O3 epitaxial films

Published:2017-10-16 Issue:16 Volume:111 Page:161602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Highland M. J.¹,Hruszkewycz S. O.¹,Fong D. D.¹,Thompson Carol²^ORCID,Fuoss P. H.¹,Calvo-Almazan I.¹,Maddali S.¹,Ulvestad A.¹,Nazaretski E.³^ORCID,Huang X.³^ORCID,Yan H.³,Chu Y. S.³,Zhou H.⁴,Baldo P. M.¹,Eastman J. A.¹

Affiliation:

1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

2. Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA

3. National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, USA

4. X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4997773

Reference20 articles.

1. Physics of transparent conductors

2. Growth of Microscale In2O3 Islands on Y-Stabilized Zirconia(100) by Molecular Beam Epitaxy

3. Nucleation of islands and continuous high-quality In2O3(001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO2(001)

4. Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics

5. Faceting control by the stoichiometry influence on the surface free energy of low-index bcc-In2O3surfaces

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