Temperature dependence of polarized electroluminescence from nonpolar m-plane InGaN-based light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2800817
Reference15 articles.
1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
2. Optical properties of InGaN quantum wells
3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
4. Macroscopic polarization and band offsets at nitride heterojunctions
5. Optical Properties of Nitride Quantum Wells: How to Separate Fluctuations and Polarization Field Effects
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3. Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures;Nano Energy;2020-10
4. Temperature‐Dependent Polarized Photoluminescence from c‐plane InGaN/GaN Multiple Quantum Wells Grown on Stripe‐Shaped Cavity‐Engineered Sapphire Substrate;physica status solidi (b);2020-04
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