CF A 2Σ+–X 2Π and B 2Δ–X 2Π study by broadband absorption spectroscopy in a plasma etch reactor: Determination of transition probabilities, CF X 2Π concentrations, and gas temperatures-Reference-Cited by-同舟云学术

CF A 2Σ+–X 2Π and B 2Δ–X 2Π study by broadband absorption spectroscopy in a plasma etch reactor: Determination of transition probabilities, CF X 2Π concentrations, and gas temperatures

Published:2003-01-08 Issue:2 Volume:118 Page:622-632
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Luque Jorge,Hudson Eric A.,Booth Jean-Paul

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1527923

Reference64 articles.

1. Differences in radical generation due to chemical bonding of gas molecules in a high-density fluorocarbon plasma: Effects of the C=C bond in fluorocarbon gases

2. CFX(X=1–3) radical densities during Si, SiO2, and Si3N4 etching employing electron cyclotron resonance CHF3 plasma

3. Infrared diode laser absorption spectroscopy measurements of CFX (X=1–3) radical densities in electron cyclotron resonance plasmas employing C4F8, C2F6, CF4, and CHF3 gases

4. Spatial distribution of the absolute densities of CFx radicals in fluorocarbon plasmas determined from single-path infrared laser absorption and laser-induced fluorescence

5. Run-to-Run Evolution of Fluorocarbon Radicals in C[sub 4]F[sub 8] Plasmas Interacting with Cold and Hot Inner Walls

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