Low-temperature Si epitaxy with high deposition rate using ion-assisted deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121519
Reference11 articles.
1. Low temperature selective silicon epitaxy by ultra high vacuum rapid thermal chemical vapor deposition using Si2H6, H2 and Cl2
2. Low temperature (313 °C) silicon epitaxial growth by plasma‐enhanced chemical vapor deposition with stainless steel mesh
3. Atmospheric pressure chemical vapor deposition of Si and SiGe at low temperatures
4. Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition
5. Atmospheric pressure chemical vapor deposition of Si and SiGe at low temperatures
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Molecular dynamics simulation of Si nanoclusters in high rate and low temperature epitaxy;Journal of Applied Physics;2012-06-15
2. Instantaneous cleaning of silicon substrates by mesoplasma for high-rate and low-temperature epitaxy;Thin Solid Films;2009-12
3. Doping of high-quality epitaxial silicon grown by hot-wire chemical vapor deposition near 700 °C;Thin Solid Films;2009-04
4. Electrical Properties of Thick Epitaxial Silicon Films Deposited at High Rates and Low Temperatures by Mesoplasma Chemical Vapor Deposition;Japanese Journal of Applied Physics;2007-08-06
5. The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperature – An electron microscopic study;Journal of Non-Crystalline Solids;2007-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3