Strain relaxation by pit formation in epitaxial SiGe alloy films grown on Si(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373705
Reference16 articles.
1. High-mobility Si and Ge structures
2. High electron mobility in modulation‐doped Si/SiGe
3. High electron mobility in modulation‐doped Si/SiGe quantum well structures
4. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
5. High electron mobility in strained Si channel of heterostructure with abrupt interface
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Growth Pits Filling Mechanism of CdZnTe Epitaxial Film Prepared by Close-Spaced Sublimation Based on the First-Principles Calculation;Journal of Crystal Growth;2023-09
2. SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions;Journal of Crystal Growth;2019-03
3. Formation of extended thermal etch pits on annealed Ge wafers;Applied Surface Science;2018-12
4. Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy;New Journal of Physics;2017-11-15
5. Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction;Nanoscale Research Letters;2017-09-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3