Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors
Author:
Affiliation:
1. Center for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, USA
2. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA
Funder
National Science Foundation (NSF)
Defense Advanced Research Projects Agency (DARPA)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973581
Reference25 articles.
1. Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%
2. Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
3. Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors
4. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
5. Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
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