In situ self-release of thick GaN wafer from sapphire substrate via graded strain field engineering
Author:
Funder
NNSF
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4861170
Reference23 articles.
1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
2. Damage-free separation of GaN thin films from sapphire substrates
3. Growth defects in GaN films on sapphire: The probable origin of threading dislocations
4. Temperature dependence of the thermal expansion of GaN
5. Cracking of GaN films
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