Coulomb effects on charged, buried metal disks at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121433
Reference13 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
3. Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
4. Deep traps in molecular‐beam‐epitaxial GaAs grown at low temperatures
5. Deep traps in molecular‐beam‐epitaxial GaAs grown at low temperatures
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1. Nanoscale tungsten aerosol particles embedded in GaAs;Applied Physics Letters;2002-04-22
2. Epitaxially overgrown, stable W–GaAs Schottky contacts with sizes down to 50 nm;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
3. Charge storage in GaAs metal insulator semiconductor field effect transistor metal nanodot memory structures;Applied Physics Letters;1999-05-17
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