Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1456971
Reference8 articles.
1. Oscillator strengths, quantum efficiencies, and laser cross sections of Yb3+and Er3+in III‐V compounds
2. Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
3. Luminescence properties of Er,O-codoped III–V semiconductors grown by organometallic vapor phase epitaxy
4. Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping
5. EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping
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