Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition-Reference-Cited by-同舟云学术

Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition

Published:1998-06-15 Issue:12 Volume:83 Page:7537-7541
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Peiró F.,Cornet A.,Morante J. R.,Beck M.,Py M. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.367517

Reference7 articles.

1. Composition inhomogeneities in the buffer layers of In0.52Al0.48As/InxGa1−xAs/InP multiquantum well structures driven by In segregation

2. Well surface roughness and fault density effects on the Hall mobility of In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As/InP high electron mobility transistors

3. Compositional modulation and long‐range ordering in GaP/InP short‐period superlattices grown by gas source molecular beam epitaxy

4. Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

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