Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3597818
Reference38 articles.
1. Effect of hydrogen on the electronic properties ofInxGa1−xAs1−yNy/GaAsquantum wells
2. Vibrational spectroscopy of hydrogenatedGaAs1−yNy: A structure-sensitive test of anH2*(N)model
3. Nitrogen-hydrogen complex inGaAsxN1−xrevealed by x-ray absorption spectroscopy
4. Formation and dissolution of D-N complexes in dilute nitrides
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1. Raman Spectroscopy and Photocurrent of GaAsN/GaAs Multiple Quantum Wells;Electronic Materials Letters;2022-01-05
2. Micro-Raman Mapping of the Strain Field in GaAsN/GaAsN:H Planar Heterostructures: A Brief Review and Recent Evolution;Applied Sciences;2019-11-13
3. Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1−xNx layers;Journal of Applied Physics;2019-05-07
4. Assessment of nitrogen incorporation in dilute GaAsN films using isotopically enriched molecular beam epitaxy and resonant nuclear reaction analysis;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03
5. Technological Applications of Hydrogenated Dilute Nitrides and Perspectives;Hydrogenated Dilute Nitride Semiconductors;2015-04-01
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