Structural and optical properties of Cr-doped semi-insulating GaN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2988000
Reference14 articles.
1. Improvements of surface morphology and sheet resistance of AlGaN/GaN HEMT structures using quasi AlGaN barrier layers
2. Electrical and optical properties of Fe-doped semi-insulating GaN templates
3. Properties of carbon-doped GaN
4. Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN
5. Deep‐center hopping conduction in GaN
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4. Influence of doping profile of GaN:Fe buffer layer on the properties of AlGaN/AlN/GaN heterostructures for high-electron mobility transistors;Journal of Physics: Conference Series;2020-12-01
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