Depth and radial profiles of defects in Czochralski‐grown silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108369
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy;Applied Physics A: Materials Science & Processing;1999-06-01
2. On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon;Applied Physics A: Materials Science & Processing;1999-04-01
3. Surface chemistry-controlled tribological behavior of silicon and diamond;Tribology Letters;1996-06
4. Nature of defects and their relationship with the growth and properties of diamond films;Physical Review B;1994-05-15
5. Positron Annihilation and X-Ray Photoelectron Spectroscopy Analyses of TiN/Si and TiN/SiO2/Si Films;MRS Proceedings;1994
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