High‐speed 1.3‐μm InGaAsP buried crescent lasers with Fe‐doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine-Reference-Cited by-同舟云学术

High‐speed 1.3‐μm InGaAsP buried crescent lasers with Fe‐doped InP current blocking layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine

Published:1992-01-15 Issue:2 Volume:71 Page:1061-1063
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Huang Rong‐Ting,Keo S.,Cheng W. H.,Wolf D.,Buehring K. D.,Agarwal R.,Jiang C.‐L.,Renner Daniel

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.350400

Reference10 articles.

1. Optoelectronic components for multigigabit systems

2. High‐speed and high‐power 1.3‐μm InGaAsP buried crescent injection lasers with semi‐insulating current blocking layers

3. High‐power and high‐speed semi‐insulating blocked V‐grooved inner‐stripe lasers at 1.3 μm wavelength fabricated onp‐InP substrates

4. High quality Fe‐doped semi‐insulating InP epitaxial layers grown by low‐pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

5. Growth and characterization of Fe‐doped semi‐insulating InP prepared by low‐pressure organometallic vapor phase epitaxy with tertiarybutylphosphine

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Speed and High-Power 1.3 µm InGaAsP/InP Selective Proton-Bombarded Buried Crescent Lasers with Optical Field Attenuation Regions;Japanese Journal of Applied Physics;1999-12-15

2. High-speed InGaAsP/InP selective proton bombarded buried crescent lasers with optical field attenuation regions;Electronics Letters;1998

3. Unintentional Redistribution of Zn in InGaAsP/InP Heterostructures;Japanese Journal of Applied Physics;1996-02-15