Effective lifetime of electrons trapped in the oxide of a metal–oxide–semiconductor structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124435
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1. Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
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3. Oxide thickness dependence of interface trap generation in a metal‐oxide‐semiconductor structure during substrate hot‐hole injection
4. Oxide-field dependence of electron injection from silicon into silicon dioxide
5. Detection of the trapped electron distribution of PMOSFET's after hot-carrier stress
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1. Characterization, modeling and physical mechanisms of different surface treatment methods at room temperature on the oxide and interfacial quality of the SiO2 film using the spectroscopic scanning capacitance microscopy;Results in Physics;2017
2. Analytical calculation of the resonant quasi-level lifetime in double-barrier quantum structures;Physica B: Condensed Matter;2001-11
3. Hydrogen dynamics in SiO[sub 2] triggered by electronic excitations;Journal of Applied Physics;2000
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