Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1563830
Reference14 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Noncontact minority‐carrier lifetime measurement at elevated temperatures for metal‐doped Czochralski silicon crystals
3. Noncontact energy level analysis of metallic impurities in silicon crystals
4. Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions
5. Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
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