Lateral positioning of InGaAs quantum dots using a buried stressor-Reference-Cited by-同舟云学术

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Lateral positioning of InGaAs quantum dots using a buried stressor

Published:2012-02-27 Issue:9 Volume:100 Page:093111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Strittmatter A.,Schliwa A.,Schulze J.-H.,Germann T. D.,Dreismann A.,Hitzemann O.,Stock E.,Ostapenko I. A.,Rodt S.,Unrau W.,Pohl U. W.,Hoffmann A.,Bimberg D.,Haisler V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3691251

Reference16 articles.

1. Engineering atomic and molecular nanostructures at surfaces

2. A single-photon detector in the far-infrared range

3. Semiconductor quantum light sources

4. Shape and stability of quantum dots

5. Strain-driven self-organization of nanostructures on semiconductor surfaces

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