Evidence for the segregation of impurities to grain boundaries in multigrained silicon using Auger electron spectroscopy and secondary ion mass spectroscopy-Reference-Cited by-同舟云学术

Evidence for the segregation of impurities to grain boundaries in multigrained silicon using Auger electron spectroscopy and secondary ion mass spectroscopy

Published:1980-02-15 Issue:4 Volume:36 Page:323-325
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kazmerski L. L.,Ireland P. J.,Ciszek T. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.91479

Reference6 articles.

1. Directionally solidified solar-grade silicon using carbon crucibles

2. Passivation of grain boundaries in polycrystalline silicon

3. Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination

4. The effects of grain boundary and interface recombination on the performance of thin-film solar cells

5. Zero‐bias resistance of grain boundaries in neutron‐transmutation‐doped polycrystalline silicon

Cited by 53 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel method to optimize the growth of crystal silicon – Current assisted directional solidification;Journal of Crystal Growth;2023-09

2. Revealing the factors influencing grain boundary segregation of P, As in Si: Insights from first-principles;Acta Materialia;2019-04

3. Methods for Assessing Surface Cleanliness;Developments in Surface Contamination and Cleaning, Volume 12;2019

4. References;Developments in Surface Contamination and Cleaning, Volume 12;2019

5. Metallic Contaminants on Surfaces and Their Impact;Developments in Surface Contamination and Cleaning: Types of Contamination and Contamination Resources;2017