Crystal-field splitting of Pr3+ (4f 2) energy levels in GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1372158
Reference27 articles.
1. Excitation mechanisms and optical properties of rare-earth ions in semiconductors
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3. Electrical properties of ytterbium‐doped InP grown by metalorganic chemical vapor deposition
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