Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN-Reference-Cited by-同舟云学术

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Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

Published:2018-04-21 Issue:15 Volume:123 Page:155303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022338

Reference40 articles.

1. Introduction to Thin Film Transistors

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors;Journal of Vacuum Science & Technology B;2024-01-01

2. Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors;Journal of Vacuum Science & Technology B;2024-01-01

3. Atomistic insights into adhesion characteristics of tungsten on titanium nitride using steered molecular dynamics with machine learning interatomic potential;Scientific Reports;2023-10-10

4. Over 200 cm² V⁻¹ s⁻¹ of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface;Applied Physics Express;2023-07-01

5. Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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