Realization of dual-gated Ge–SixGe1−x core-shell nanowire field effect transistors with highly doped source and drain
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3079410
Reference19 articles.
1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
2. Silicon Vertically Integrated Nanowire Field Effect Transistors
3. Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed
4. Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistors
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