Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371219
Reference33 articles.
1. High speed semiconductor laser design and performance
2. Spectral hole‐burning and gain saturation in semiconductor lasers: Strong‐signal theory
3. Theoretical investigation of gain enhancements in strained In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers via p-doping
4. Nonlinear gain coefficients in semiconductor quantum-well lasers: effects of carrier diffusion, capture, and escape
5. Effects of carrier transport on high‐speed quantum well lasers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm;Optics Letters;2001-05-15
2. A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm;Review of Scientific Instruments;2001-05
3. Optical propeties of In 1-x GaxAs y P 1-y multiple quantum well heterostructure lasers;SPIE Proceedings;2000-12-15
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