Electroluminescent and carrier transport mechanisms of MgxZn1−xO∕Si heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2798602
Reference13 articles.
1. MgxZn1−xO as a II–VI widegap semiconductor alloy
2. Variation of structural, electrical, and optical properties of Zn1−xMgxO thin films
3. Thermal stability of supersaturated MgxZn1−xO alloy films and MgxZn1−xO/ZnO heterointerfaces
4. Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1−xMgxO(0⩽x⩽0.49) thin films
5. The study of composition non-uniformity in ternary MgxZn1 xO thin films
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2. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications;Japanese Journal of Applied Physics;2017-11-08
3. Improvement of the Crystallinity of MgZnO with a Zn Buffer Layer by Sol-Gel Spin-coating Method;Bulletin of the Korean Chemical Society;2015-05-26
4. Dual-color ultraviolet photodetector based on mixed-phase-MgZnO/i-MgO/p-Si double heterojunction;Applied Physics Letters;2012-08-20
5. Electrical Transport Properties Through Nanoscale and Large-Area Contacts of ZnO/Si Diodes;Current Nanoscience;2010-04-01
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