The structural, chemical, and electronic properties of a stable GaS/GaAs interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371776
Reference17 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces
3. Determination of the structure of GaAs(100)-S with chemical-state-specific photoelectron diffraction
4. Reflection high‐energy electron diffraction and x‐ray photoelectron spectroscopic study on (NH4)2Sx‐treated GaAs (100) surfaces
5. First-principles study of sulfur passivation of GaAs(001) surfaces
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