Scaling of equivalent oxide thickness of atomic layer deposited HfO2 film using RuO2 electrodes suppressing the dielectric dead-layer effect
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4764541
Reference21 articles.
1. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory
2. High-κ gate dielectrics: Current status and materials properties considerations
3. High dielectric constant gate oxides for metal oxide Si transistors
4. A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes
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