Evidence of temperature dependence of initial adsorption sites of Ge atoms on Si(111)-7×7
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2198109
Reference24 articles.
1. Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy
2. Low‐energy electron diffraction analysis of the Si(111)7×7 structure
3. Reconstructions and phase transitions of Ge on the Si(111)7 × 7 surface
4. Ge chemisorption and alloying on the Si(111)-(7×7) surface
5. Dynamic Behavior of Si Magic Clusters on Si(111) Surfaces
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1. Controllable growth of low-dimensional nanostructures on well-defined surfaces;Chinese Physics B;2013-09
2. Low-flux elucidation of initial growth of Ge clusters deposited onSi(111)−7×7observed by scanning tunneling microscopy;Physical Review B;2009-01-07
3. Scanning Tunneling Microscopy of the Si(111)-7×7 Surface and Adsorbed Ge Nanostructures;Applied Scanning Probe Methods XII;2009
4. Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations;Journal of Nanomaterials;2008
5. Self-assembly of periodic nanoclusters of Si and Ge along atomically straight steps of a vicinal Si(111);Journal of Applied Physics;2007-04-15
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