Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence-Reference-Cited by-同舟云学术

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Published:2016-12-05 Issue:23 Volume:109 Page:232103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu Tongtong¹^ORCID,Gachet David²,Tang Fengzai¹,Fu Wai Yuen³,Oehler Fabrice¹^ORCID,Kappers Menno J.¹,Dawson Phil⁴^ORCID,Humphreys Colin J.¹^ORCID,Oliver Rachel A.¹^ORCID

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

2. Attolight AG, EPFL Innovation Park, Building D, CH-1015 Lausanne, Switzerland

3. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong

4. School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4971366

Reference21 articles.

1. Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

2. Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells

3. Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates

4. High-brightness polarized light-emitting diodes

5. Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure

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