As-related stability of the band gap temperature dependence in N-rich GaNAs-Reference-Cited by-同舟云学术

As-related stability of the band gap temperature dependence in N-rich GaNAs

Published:2019-08-26 Issue:9 Volume:115 Page:092106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zdanowicz E.¹²^ORCID,Ciechanowicz P.¹³^ORCID,Opolczynska K.¹³^ORCID,Majchrzak D.¹⁴^ORCID,Rousset J.-G.¹^ORCID,Piskorska-Hommel E.¹⁴^ORCID,Grodzicki M.¹³^ORCID,Komorowska K.¹^ORCID,Serafinczuk J.¹⁵^ORCID,Hommel D.¹³^ORCID,Kudrawiec R.¹²^ORCID

Affiliation:

1. ŁUKASIEWICZ Research Network – PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland

2. Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

3. Institute of Experimental Physics, University of Wrocław, Maxa Borna 9, 50-204 Wrocław, Poland

4. Institute of Low Temperature and Structure Research PAS, Okólna 2, 50-422 Wrocław, Poland

5. Faculty of Microsystems Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Funder

Foundation for Polish Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5110245

Reference38 articles.

1. Growth and characterization of ZnO1−xSx highly mismatched alloys over the entire composition

2. Band Anticrossing in GaInNAs Alloys

3. Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

4. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides

5. Electronic Band Structure ofGaNxPyAs1−x−yHighly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells

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