Valence band structures of the phase change material Ge2Sb2Te5-Reference-Cited by-同舟云学术

Valence band structures of the phase change material Ge2Sb2Te5

Published:2007-12-17 Issue:25 Volume:91 Page:251901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Dohyun,Lee Sang Sun,Kim Wondong,Hwang Chanyong,Hossain M. B.,Hung Ngyuen Le,Kim Hyojin,Kim C. G.,Lee Hangil,Hwang Han Na,Hwang Chan-Cuk,Lee Tae-Yon,Kang Younseon,Kim Cheolkyu,Suh Dong-Seok,Kim Kijoon H. P.,Khang Yoonho

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2825573

Reference21 articles.

1. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

2. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements

3. Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases

4. Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5Films

5. Separate domain formation in Ge2Sb2Te5–SiOx mixed layer

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