Kinetics of phosphorus proximity rapid thermal diffusion using spin‐on dopant source for shallow junctions fabrication
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360653
Reference26 articles.
1. Ultra-shallow junction formation using silicide as a diffusion source and low thermal budget
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4. Doping of trench capacitors by rapid thermal diffusion
5. Phosphorus Diffusion in Silicon from Enclosed Solid Planar Sources
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2. Borosilicate glass nanolayer as a spin-on dopant source: FTIR and spectroscopic ellipsometry investigations;Journal of Materials Science: Materials in Electronics;2016-03-04
3. Study of the phosphorus emitter of Cz-Si solar cells obtained by in-line spray coating;Solar Energy;2014-07
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5. A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation;IEEE Transactions On Nanotechnology;2005-09
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