Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4772003
Reference23 articles.
1. Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance
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3. Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM
4. High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application
5. Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
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3. High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition;IEEE Transactions on Electron Devices;2020-02
4. One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications;IEEE Transactions on Electron Devices;2019-03
5. Characteristic investigation of a flexible resistive memory based on a tunneling junction of Pd/BTO/LSMO on mica substrate;Applied Physics Letters;2018-11-26
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