Effect of double MgO tunneling barrier on thermal stability and TMR ratio for perpendicular MTJ spin-valve with tungsten layers
Author:
Affiliation:
1. Advanced Semiconductor Material and Device Development Center, Department of Electronics, Hanyang University, Seoul 133-791, South Korea
2. Sumco Corporation, Chitose-shi, Hokkaido 066-0051, Japan
Funder
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4967172
Reference29 articles.
1. A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory
2. Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy
3. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
4. Dependence of Magnetic Anisotropy in Co$_{20}$Fe$_{60}$B$_{20}$ Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis
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