Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
Author:
Affiliation:
1. Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA
2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA
Funder
Army Research Office (ARO)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913611
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