Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism-Reference-Cited by-同舟云学术

Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism

Published:2020-01-01 Issue:1 Volume:10 Page:015309
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Timofeev Vyacheslav¹^ORCID,Mashanov Vladimir¹^ORCID,Nikiforov Alexander¹²^ORCID,Skvortsov Ilya¹³^ORCID,Gavrilova Tatyana¹,Gulyaev Dmitry¹,Gutakovskii Anton¹³^ORCID,Chetyrin Igor⁴

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia

2. National Research Tomsk State University, 36 Lenin Avenue, Tomsk 634050, Russia

3. Novosibirsk State University, 1 Pirogov Str., Novosibirsk 630090, Russia

4. Boreskov Institute of Catalysis SB RAS, 5 Lavrentyev Avenue, Novosibirsk 630090, Russia

Funder

Russian Science Foundation

Russian Foundation for Fundamental Investigations

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5139936

Reference20 articles.

1. Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

2. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

3. Ge1−x−ySixSny light emitting diodes on silicon for mid-infrared photonic applications

4. SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters

5. Lasing in direct-bandgap GeSn alloy grown on Si

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1. Novel Group-IV Alloy-Based MOS Field-Effect Phototransistors for Near-Infrared Applications;IEEE Sensors Journal;2023-08-01

2. Epitaxial growth of peculiar GeSn and SiSn nanostructures using a Sn island array as a seed;Applied Surface Science;2021-07

3. Growth and characterization of low-temperature Si1-xSnx on Si using plasma enhanced chemical vapor deposition;Optical Materials Express;2020-08-24