Laser‐induced lateral epitaxial growth of silicon over silicon dioxide with locally varied encapsulation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93330
Reference6 articles.
1. Si Bridging Epitaxy from Si Windows onto SiO2byQ-Switched Ruby Laser Pulse Annealing
2. Seeded and limited seeding regrowth of Si over SiO2by cw laser annealing
3. Lateral Epitaxial Growth in Poly-Si Film over SiO2from Single-Si Seed by Scanning CW Ar Laser Annealing
4. Silicon graphoepitaxy using a strip‐heater oven
5. Laser‐induced crystallization of silicon islands on amorphous substrates: Multilayer structures
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1. Other Approaches to Oriented Crystallization on Amorphous Substrates;Oriented Crystallization on Amorphous Substrates;1991
2. Artificial Epitaxy: New Developments and New Mechanisms;Growth of Crystals;1988
3. Modeling of heat flow in multilayer cw laser‐annealed structures;Journal of Applied Physics;1986-05-15
4. Thermal annealing behaviour of Si/SiO2 structures;Thin Solid Films;1986-01
5. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01
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